Invention Grant
- Patent Title: Diode and resistive memory device structures
- Patent Title (中): 二极管和电阻式存储器件结构
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Application No.: US12072588Application Date: 2008-02-27
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Publication No.: US08035099B2Publication Date: 2011-10-11
- Inventor: Manuj Rathor , An Chen , Steven Avanzino , Suzette K. Pangrle
- Applicant: Manuj Rathor , An Chen , Steven Avanzino , Suzette K. Pangrle
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
Public/Granted literature
- US20090212283A1 Diode and resistive memory device structures Public/Granted day:2009-08-27
Information query
IPC分类:
