发明授权
US08035169B2 Semiconductor device with suppressed crystal defects in active areas
有权
具有抑制活性区域晶体缺陷的半导体器件
- 专利标题： Semiconductor device with suppressed crystal defects in active areas
- 专利标题（中）： 具有抑制活性区域晶体缺陷的半导体器件
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申请号： US12262180申请日： 2008-10-31
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公开(公告)号： US08035169B2公开(公告)日： 2011-10-11
- 发明人: Hiroshi Ishida , Atsushi Maeda , Minoru Abiko , Takehiko Kijima , Takashi Takeuchi , Shoji Yoshida , Natsuo Yamaguchi , Yasuhiro Kimura , Tetsuya Uchida , Norio Ishitsuka
- 申请人： Hiroshi Ishida , Atsushi Maeda , Minoru Abiko , Takehiko Kijima , Takashi Takeuchi , Shoji Yoshida , Natsuo Yamaguchi , Yasuhiro Kimura , Tetsuya Uchida , Norio Ishitsuka
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2007-304183 20071126
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG. 4. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.
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