发明授权
US08039277B2 Providing current control over wafer borne semiconductor devices using overlayer patterns
有权
使用覆盖图案提供对晶圆传输半导体器件的电流控制
- 专利标题: Providing current control over wafer borne semiconductor devices using overlayer patterns
- 专利标题(中): 使用覆盖图案提供对晶圆传输半导体器件的电流控制
-
申请号: US10486665申请日: 2002-08-12
-
公开(公告)号: US08039277B2公开(公告)日: 2011-10-18
- 发明人: Michael J. Haji-Sheikh , James R. Biard , James K. Guenter , Bobby M. Hawkins
- 申请人: Michael J. Haji-Sheikh , James R. Biard , James K. Guenter , Bobby M. Hawkins
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Maschoff Gilmore & Israelsen
- 国际申请: PCT/US02/25648 WO 20020812
- 国际公布: WO03/017352 WO 20030227
- 主分类号: G01R31/26
- IPC分类号: G01R31/26 ; H01L21/66
摘要:
Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1240) having a substrate (1240), at least one active layer (1240) and at least one surface layer (1240), Current control can be achieved through the formation of patterns (1240) surrounding contacts (1215), said patterns (1240) including insulating implants and/or sacrificial layers formed between active devices represented by said contacts (1215). Current flows through active regions (1260) associated with said contacts (1215) and active devices. Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.