发明授权
US08039829B2 Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
有权
接触结构，采用该接触结构的半导体器件及其制造方法
- 专利标题： Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
- 专利标题（中）： 接触结构，采用该接触结构的半导体器件及其制造方法
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申请号： US12412657申请日： 2009-03-27
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公开(公告)号： US08039829B2公开(公告)日： 2011-10-18
- 发明人: Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
- 申请人： Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
- 申请人地址： KR Suwon-Si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2008-0029249 20080328
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.
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