Invention Grant
US08039829B2 Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
有权
接触结构，采用该接触结构的半导体器件及其制造方法
- Patent Title: Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
- Patent Title (中): 接触结构，采用该接触结构的半导体器件及其制造方法
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Application No.: US12412657Application Date: 2009-03-27
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Publication No.: US08039829B2Publication Date: 2011-10-18
- Inventor: Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
- Applicant: Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0029249 20080328
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.
Public/Granted literature
- US20090243117A1 CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2009-10-01
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