发明授权
US08039875B2 Structure for pixel sensor cell that collects electrons and holes
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用于收集电子和空穴的像素传感器单元的结构
- 专利标题： Structure for pixel sensor cell that collects electrons and holes
- 专利标题（中）： 用于收集电子和空穴的像素传感器单元的结构
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申请号： US11850776申请日： 2007-09-06
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公开(公告)号： US08039875B2公开(公告)日： 2011-10-18
- 发明人: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D Jaffe , Jeffrey B. Johnson , Alain Loiseau
- 申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D Jaffe , Jeffrey B. Johnson , Alain Loiseau
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Anthony J. Canale
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L31/062
摘要：
The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
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