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US08043974B2 Semiconductor wet etchant and method of forming interconnection structure using the same 有权
半导体湿式蚀刻剂和使用其形成互连结构的方法

Semiconductor wet etchant and method of forming interconnection structure using the same
摘要：
A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).
摘要（中）：

半导体湿蚀刻剂包括去离子水，氟基化合物，氧化剂和无机盐。 基于蚀刻剂的总重量，氟系化合物的浓度为0.25〜10.0重量％，氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量％，无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量％。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。

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