发明授权
- 专利标题: Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer
- 专利标题(中): 制造SOI衬底的方法和制造单晶半导体层的方法
-
申请号: US12564973申请日: 2009-09-23
-
公开(公告)号: US08048754B2公开(公告)日: 2011-11-01
- 发明人: Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
- 申请人: Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-250114 20080929
- 主分类号: H01L21/8222
- IPC分类号: H01L21/8222 ; H01L21/331
摘要:
An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.