发明授权
US08053777B2 Thin film transistors for imaging system and method of making the same
有权
用于成像系统的薄膜晶体管及其制造方法
- 专利标题： Thin film transistors for imaging system and method of making the same
- 专利标题（中）： 用于成像系统的薄膜晶体管及其制造方法
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申请号： US11096177申请日： 2005-03-31
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公开(公告)号： US08053777B2公开(公告)日： 2011-11-08
- 发明人: Douglas Albagli , William Andrew Hennessy
- 申请人： Douglas Albagli , William Andrew Hennessy
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Fletcher Yoder
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/76 ; H01L31/036 ; H01L31/112 ; H01L29/04 ; H01L31/0376 ; H01L31/20 ; H01L29/15 ; H01L27/10 ; H01L29/73 ; H01L29/74 ; H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A detector including an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout line and the electrode. In one embodiment, the detector includes a source electrode and a drain electrode formed from the first layer of conductive material, and a data line formed from the second layer of conductive material, such that the source and drain electrodes are vertically offset from the data line. Alternatively, in another embodiment, the detector includes a gate electrode formed from the first layer of conductive material, and a scan line formed from the second layer of conductive material, such that the gate electrode is vertically offset from the scan line.
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