发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US10852150申请日: 2004-05-25
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公开(公告)号: US08054680B2公开(公告)日: 2011-11-08
- 发明人: Nozomu Matsuzaki , Tetsuya Ishimaru , Makoto Mizuno , Takashi Hashimoto
- 申请人: Nozomu Matsuzaki , Tetsuya Ishimaru , Makoto Mizuno , Takashi Hashimoto
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2003-150226 20030528; JP2004-129233 20040426
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C7/00 ; H01L29/792
摘要:
Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.
公开/授权文献
- US20050006698A1 Semiconductor device 公开/授权日:2005-01-13