发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12853660申请日： 2010-08-10
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公开(公告)号： US08058165B2公开(公告)日： 2011-11-15
- 发明人: Masaya Kawano , Koji Soejima , Yoichiro Kurita
- 申请人： Masaya Kawano , Koji Soejima , Yoichiro Kurita
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2005-215409 20050726
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46 ; H01L21/44 ; H01L21/4763
摘要：
A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer 20a on a supporting substrate 70, forming an interconnect layer 10 including an interconnect 18 on the seed metal layer 20a, removing the supporting substrate 70 after forming the interconnect layer 10, and patterning the seed metal layer 20a thus to form an interconnect 20 after removing the supporting substrate.
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