发明授权
- 专利标题： Atomic layer removal process with higher etch amount
- 专利标题（中）： 具有更高蚀刻量的原子层去除工艺
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申请号： US12343102申请日： 2008-12-23
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公开(公告)号： US08058179B1公开(公告)日： 2011-11-15
- 发明人: Nerissa Draeger , Harald te Nijenhuis , Henner Meinhold , Bart van Schravendijk , Lakshmi Nittala
- 申请人： Nerissa Draeger , Harald te Nijenhuis , Henner Meinhold , Bart van Schravendijk , Lakshmi Nittala
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
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