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发明授权
US08058180B2 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture 失效
使用氨和过氧化物混合物的稀水溶液制造半导体器件的方法

Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture
摘要：
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
摘要（中）：

本发明提供制造半导体器件的方法，其中在半导体衬底上形成合金层以形成衬底结构，该方法包括使用稀氨水溶液和过氧化物混合物（APM）进行清洗和/或湿蚀刻处理步骤 在衬底结构上。

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