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    Cleaning composition and method of cleaning a semiconductor device using the same
    4.
    发明授权
    Cleaning composition and method of cleaning a semiconductor device using the same 有权
    使用该半导体器件的清洁组合物和清洁半导体器件的方法

    公开(公告)号：US07309683B2

    公开(公告)日：2007-12-18

    申请号：US11038585

    申请日：2005-01-19

    申请人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Sung Han

    发明人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Sung Han

    IPC分类号： C11D1/12

    CPC分类号： H01L21/02071 ,  C11D1/146 ,  C11D3/0073 ,  C11D3/2031 ,  C11D3/2055 ,  C11D3/3409 ,  C11D3/3427 ,  C11D11/0047

    摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.

    摘要翻译： 清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种： 由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，鲸蜡基，硬脂基，油基 基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

    Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure
    6.
    发明授权
    Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure 有权
    具有电极结构的电容器，具有电极结构的电容器的制造方法以及具有电极结构的半导体器件

    公开(公告)号：US08580648B2

    公开(公告)日：2013-11-12

    申请号：US13035342

    申请日：2011-02-25

    申请人： Suk-Hun Choi ,  Kyung-Hyun Kim ,  Chang-Sup Mun ,  Sung-Jun Kim ,  Jin-I Lee

    发明人： Suk-Hun Choi ,  Kyung-Hyun Kim ,  Chang-Sup Mun ,  Sung-Jun Kim ,  Jin-I Lee

    IPC分类号： H01L29/92

    CPC分类号： H01L27/10852 ,  H01G4/33 ,  H01L27/10894 ,  H01L28/91

    摘要： A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.

    摘要翻译： 电容器包括具有开口的绝缘层，具有导电图案的电极结构，电介质层和上部电极的物体或基板。 电极结构可以具有包括金属的第一导电图案和包括从第一导电图案产生的金属氧化物的第二导电图案。 第一导电图案可以填充开口并且可以突出在绝缘层上。 第二导电图案可以从第一导电图案延伸。 电极结构可以另外包括设置在第二导电图案上的第三导电图案。 包括电极结构的电容器可以确保改进的结构稳定性和电特性。

    THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    7.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
    三维半导体器件及其制造方法

    公开(公告)号：US20120108048A1

    公开(公告)日：2012-05-03

    申请号：US13286384

    申请日：2011-11-01

    申请人： Jong Heun Lim ,  Jae Joo Shim ,  Hyo Jung Kim ,  Kyung Hyun Kim ,  Chang Sup Mun

    发明人： Jong Heun Lim ,  Jae Joo Shim ,  Hyo Jung Kim ,  Kyung Hyun Kim ,  Chang Sup Mun

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28 ,  H01L27/11529 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

    摘要： A method of fabricating a three-dimensional semiconductor memory device includes providing a substrate which includes a cell array region and a peripheral region. The method further includes a peripheral structure on the peripheral region of the substrate, where the peripheral structure includes peripheral circuits and is configured to expose the cell array region of the substrate. The method further includes forming a lower cell structure on the cell array region of the substrate, forming an insulating layer to cover the peripheral structure and the lower cell structure on the substrate, planarizing the insulating layer using top surfaces of the peripheral structure and the lower cell structure as a planarization stop layer, and forming an upper cell structure on the lower cell structure.

    摘要翻译： 一种制造三维半导体存储器件的方法包括提供包括单元阵列区域和周边区域的衬底。 该方法还包括在基板的外围区域上的周边结构，其中外围结构包括外围电路并且被配置为暴露基板的单元阵列区域。 该方法还包括在基板的单元阵列区域上形成下单元结构，形成绝缘层以覆盖基板上的外围结构和下单元结构，使用外围结构的顶表面和下层单元平面化绝缘层 电池结构作为平坦化停止层，并在下电池结构上形成上电池结构。

    CAPACITOR HAVING AN ELECTRODE STRUCTURE, METHOD OF MANUFACTURING A CAPACITOR HAVING AN ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING AN ELECTRODE STRUCTURE
    8.
    发明申请
    CAPACITOR HAVING AN ELECTRODE STRUCTURE, METHOD OF MANUFACTURING A CAPACITOR HAVING AN ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING AN ELECTRODE STRUCTURE 有权
    具有电极结构的电容器，具有电极结构的电容器的制造方法和具有电极结构的半导体器件

    公开(公告)号：US20110204427A1

    公开(公告)日：2011-08-25

    申请号：US13035342

    申请日：2011-02-25

    申请人： Suk-Hun CHOI ,  Kyung-Hyun KIM ,  Chang-Sup MUN ,  Sung-Jun KIM ,  Jin-I LEE

    发明人： Suk-Hun CHOI ,  Kyung-Hyun KIM ,  Chang-Sup MUN ,  Sung-Jun KIM ,  Jin-I LEE

    IPC分类号： H01L29/772 ,  H01G4/06 ,  H01G7/00

    CPC分类号： H01L27/10852 ,  H01G4/33 ,  H01L27/10894 ,  H01L28/91

    摘要： A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.

    摘要翻译： 电容器包括具有开口的绝缘层，具有导电图案的电极结构，电介质层和上部电极的物体或基板。 电极结构可以具有包括金属的第一导电图案和包括从第一导电图案产生的金属氧化物的第二导电图案。 第一导电图案可以填充开口并且可以突出在绝缘层上。 第二导电图案可以从第一导电图案延伸。 电极结构可以另外包括设置在第二导电图案上的第三导电图案。 包括电极结构的电容器可以确保改进的结构稳定性和电特性。

    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device
    9.
    发明申请
    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
    用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法

    公开(公告)号：US20070072431A1

    公开(公告)日：2007-03-29

    申请号：US11527473

    申请日：2006-09-27

    申请人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    发明人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02057 ,  H01L21/02082

    摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.

    摘要翻译： 公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。 该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。 清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。 此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。