发明授权
- 专利标题： Programmable resistive memory cell with oxide layer
- 专利标题（中）： 具有氧化物层的可编程电阻存储单元
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申请号： US12390711申请日： 2009-02-23
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公开(公告)号： US08058646B2公开(公告)日： 2011-11-15
- 发明人: Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- 申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps, LLC
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
公开/授权文献
- US20100102308A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER 公开/授权日：2010-04-29