发明授权
- 专利标题： Positive resist composition and patterning process
- 专利标题（中）： 正抗蚀剂组成和图案化工艺
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申请号： US12370652申请日： 2009-02-13
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公开(公告)号： US08062828B2公开(公告)日： 2011-11-22
- 发明人: Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
- 申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2008-031322 20080213
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/38
摘要：
A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
公开/授权文献
- US20090202943A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 公开/授权日：2009-08-13
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