发明授权
- 专利标题： Monolithic silicon-based photonic receiver
- 专利标题（中）： 单片硅基光子接收器
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申请号： US11837222申请日： 2007-08-10
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公开(公告)号： US08062919B2公开(公告)日： 2011-11-22
- 发明人: Alyssa B. Apsel , Anand M. Pappu , Cheng Po Chen , Tao Yin
- 申请人： Alyssa B. Apsel , Anand M. Pappu , Cheng Po Chen , Tao Yin
- 申请人地址： US NY Ithaca
- 专利权人： Cornell Research Foundation, Inc.
- 当前专利权人： Cornell Research Foundation, Inc.
- 当前专利权人地址： US NY Ithaca
- 代理机构： Burns & Levinson LLP
- 代理商 Orlando Lopez
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.
公开/授权文献
- US20080054391A1 MONOLITHIC SILICON-BASED PHOTONIC RECEIVER 公开/授权日：2008-03-06
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