发明授权
- 专利标题： Substrate processing method and substrate processing apparatus
- 专利标题（中）： 基板处理方法和基板处理装置
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申请号： US12091131申请日： 2007-06-22
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公开(公告)号： US08062955B2公开(公告)日： 2011-11-22
- 发明人: Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
- 申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-174745 20060626; JP2006-194758 20060714
- 国际申请： PCT/JP2007/062624 WO 20070622
- 国际公布： WO2008/001697 WO 20080103
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.