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1.发明授权公开(公告)号：US08770138B2
公开(公告)日：2014-07-08
申请号：US13180702
申请日：2011-07-12
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20110318925A1
公开(公告)日：2011-12-29
申请号：US13227012
申请日：2011-09-07
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/28
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在目标基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。
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3.发明申请公开(公告)号：US20110265718A1
公开(公告)日：2011-11-03
申请号：US13180702
申请日：2011-07-12
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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4.发明申请公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20080226826A1
公开(公告)日：2008-09-18
申请号：US12091197
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。
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公开(公告)号：US08062955B2
公开(公告)日：2011-11-22
申请号：US12091131
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/76
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.
摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.
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7.发明授权公开(公告)号：US08003509B2
公开(公告)日：2011-08-23
申请号：US12405644
申请日：2009-03-17
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20080280437A1
公开(公告)日：2008-11-13
申请号：US12091131
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.
摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.
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公开(公告)号：US20070128373A1
公开(公告)日：2007-06-07
申请号：US11606158
申请日：2006-11-30
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.
摘要翻译： 向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构 在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构 进料管停止。
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公开(公告)号：US20070148972A1
公开(公告)日：2007-06-28
申请号：US11643959
申请日：2006-12-22
IPC分类号： H01L21/44
CPC分类号： H01L21/76868 , H01L21/288 , H01L21/76873
摘要： Disclosed is a method of repairing, before embedding a recess with copper, defects of a seed layer formed by sputtering, when forming damascene interconnects. After a copper (silver is also available) nanoparticle-containing sol, e.g., a copper ink is applied onto a substrate, an etch back process for removing the excessive copper ink is performed by supplying an organic solvent onto the substrate. Thereafter, a disperse medium in the copper ink is evaporated by a baking process; and then a dispersant in the copper ink is removed and the nanoparticles are combined with each other to provide a continuous copper film by an annealing process. The etch back process prevents development of defects in a repaired seed layer.
摘要翻译： 公开了一种在形成镶嵌互连件之前，在嵌入具有铜的凹槽之前，通过溅射形成的晶种层的缺陷来修复的方法。 在铜（也可以使用银）之后，将含有纳米颗粒的溶胶，例如铜油墨施加到基底上，通过向基底上提供有机溶剂来进行用于去除过量铜油墨的回蚀工艺。 此后，通过烘烤工艺蒸发铜油墨中的分散介质; 然后除去铜油墨中的分散剂，并将纳米颗粒彼此组合以通过退火工艺提供连续的铜膜。 回蚀过程防止修复的种子层中的缺陷的发展。
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