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发明授权
US08063393B2 Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same 有权
存储器件，触针结构，电子设备及其制造方法

Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same
摘要：
An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the hollow cone spacer, the hollow column spacer, and the base layer form a space, and sidewalls of the hollow cone spacer and the hollow column spacer are made of silicon-containing organic or inorganic materials.
摘要（中）：

公开了一种示例性的中空触针结构，其包括在基层上形成的中空柱间隔件和堆叠在中空柱间隔件上的中空锥形间隔件，其中中空圆锥间隔件，中空柱间隔件和基层形成空间 ，中空圆锥间隔件和中空柱间隔件的侧壁由含硅有机或无机材料制成。

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