发明授权
- 专利标题： Tensile strained GE for electronic and optoelectronic applications
- 专利标题（中）： 电子和光电应用的拉伸应变GE
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申请号： US12265976申请日： 2008-11-06
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公开(公告)号： US08063413B2公开(公告)日： 2011-11-22
- 发明人: Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
- 申请人： Yu Bai , Minjoo L. Lee , Eugene A. Fitzgerald
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理机构： Gesmer Updegrove LLP
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.
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