发明授权
- 专利标题: Ornand flash memory and method for controlling the same
- 专利标题(中): Ornand闪存及其控制方法
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申请号: US11974295申请日: 2007-10-11
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公开(公告)号: US08064264B2公开(公告)日: 2011-11-22
- 发明人: Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
- 申请人: Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 当前专利权人地址: US CA Sunnyvale
- 优先权: JP2006-279418 20061013
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.
公开/授权文献
- US20080098165A1 Semiconductor device and method of controlling the same 公开/授权日:2008-04-24
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