发明授权
US08064264B2 Ornand flash memory and method for controlling the same 有权
Ornand闪存及其控制方法

Ornand flash memory and method for controlling the same
摘要:
A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.
公开/授权文献
信息查询
0/0