发明授权
- 专利标题： Laser diode with improved heat dissipation
- 专利标题（中）： 激光二极管具有改善的散热性能
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申请号： US12041079申请日： 2008-03-03
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公开(公告)号： US08073031B2公开(公告)日： 2011-12-06
- 发明人: Wei-Sin Tan , Jennifer Mary Barnes
- 申请人： Wei-Sin Tan , Jennifer Mary Barnes
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.
公开/授权文献
- US20090219966A1 LASER DIODE WITH IMPROVED HEAT DISSIPATION 公开/授权日：2009-09-03
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