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公开(公告)号：US08073031B2
公开(公告)日：2011-12-06
申请号：US12041079
申请日：2008-03-03
申请人： Wei-Sin Tan , Jennifer Mary Barnes
发明人： Wei-Sin Tan , Jennifer Mary Barnes
IPC分类号： H01S5/00
CPC分类号： H01S5/024 , B82Y20/00 , H01S5/0224 , H01S5/02461 , H01S5/0655 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/2219 , H01S5/222 , H01S5/34333 , H01S2301/18
摘要： A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.
摘要翻译： 一种激光二极管结构，其包括两个不同的绝缘体层，一个保持良好的光学约束，通常位于激光脊的侧面，另一个用于改善通常位于远离脊的蚀刻表面上的散热性能。
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公开(公告)号：US20100265976A1
公开(公告)日：2010-10-21
申请号：US12741217
申请日：2008-10-21
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02631 , H01S5/221 , H01S5/2216 , H01S5/2231 , H01S5/32341
摘要： A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 102 ohm·cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.
摘要翻译： 描述了具有例如用作电流阻挡层的非零In含量的AlInN（7）层的III族氮化物复合器件。 AlInN（7）的层至少具有限定在其中的孔。 AlInN（7）的层与下层（例如下面的GaN层）以较小的晶格失配生长，从而防止在器件中增加晶体应变。 通过使用优化的生长条件，使AlInN的电阻率高于102欧姆·厘米，从而防止在具有较小电阻率层的多层半导体器件中用作电流阻挡层时的电流流动。 结果，当AlInN层具有开口并且放置在激光二极管器件中时，器件的电阻较低，导致具有更好性能的器件。
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3.发明授权公开(公告)号：US08314439B2
公开(公告)日：2012-11-20
申请号：US13025265
申请日：2011-02-11
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44 , H01L2933/0083
摘要： A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
摘要翻译： 提供一种发光二极管（LED）及其制造方法。 LED包括形成在基板上的导电n型区域; 形成在n型区域上的有源区; 形成在所述有源区上的第一p型区; 形成在所述第一p型区域上的多个纳米结构，以从所述有源区域进行光提取，所述纳米结构具有小于500nm的直径; 在第一p型区域上重新生长的第二p型区域，以与纳米结构组合形成非平面表面; 以及形成在非平面表面上的p型电极。
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公开(公告)号：US08258524B2
公开(公告)日：2012-09-04
申请号：US12693475
申请日：2010-01-26
CPC分类号： F21V3/00 , F21K9/23 , F21K9/232 , F21K9/61 , F21K9/64 , F21K9/65 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , G02B6/0008
摘要： A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.
摘要翻译： 一种发光二极管装置，其包括至少一个发光二极管，具有其上安装有所述至少一个发光二极管的表面的散热底盘，以及波导，其一端耦合到所述至少一个发光二极管，用于 从中接收光。 波导具有包括光提取和再分布区域的另一端，并且波导被配置为将从至少一个发光二极管接收的光引导离开散热底盘并朝向光提取和再分布区域。 光提取和再分布区域被配置为提取并重新分布来自波导的光。
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