发明授权
US08076053B2 Upper layer-forming composition and photoresist patterning method
有权
上层形成组合物和光致抗蚀剂图案化方法
- 专利标题： Upper layer-forming composition and photoresist patterning method
- 专利标题（中）： 上层形成组合物和光致抗蚀剂图案化方法
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申请号： US12091712申请日： 2006-10-25
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公开(公告)号： US08076053B2公开(公告)日： 2011-12-13
- 发明人: Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
- 申请人： Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2005-312775 20051027; JP2006-085223 20060327
- 国际申请： PCT/JP2006/321247 WO 20061025
- 国际公布： WO2007/049637 WO 20070503
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004 ; G03F7/40 ; G03F7/11
摘要：
An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.
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