发明授权
US08076220B2 Fabrication method for device structure having transparent dielectric substrate
有权
具有透明电介质基板的器件结构的制造方法
- 专利标题: Fabrication method for device structure having transparent dielectric substrate
- 专利标题(中): 具有透明电介质基板的器件结构的制造方法
-
申请号: US12779244申请日: 2010-05-13
-
公开(公告)号: US08076220B2公开(公告)日: 2011-12-13
- 发明人: Toshiyuki Nakamura , Satoshi Machida , Sachiko Yabe , Takashi Taguchi
- 申请人: Toshiyuki Nakamura , Satoshi Machida , Sachiko Yabe , Takashi Taguchi
- 申请人地址: JP Tokyo
- 专利权人: Oki Semiconductor Co., Ltd.
- 当前专利权人: Oki Semiconductor Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Volentine & Whitt, PLLC
- 优先权: JP2004-334914 20041118
- 主分类号: H01L21/36
- IPC分类号: H01L21/36
摘要:
A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of the substrate is coated with a triple-layer light-reflecting film, preferably a film in which a silicon oxide or silicon nitride layer is sandwiched between polycrystalline silicon layers. This structure provides high reflectance with a combined film thickness of less than half a micrometer.