发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12912287申请日： 2010-10-26
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公开(公告)号： US08076767B2公开(公告)日： 2011-12-13
- 发明人: Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Toshio Nagasawa
- 申请人： Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Toshio Nagasawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2004-123153 20040419
- 主分类号： H01L23/02
- IPC分类号： H01L23/02
摘要：
A non-insulated DC-DC converter has a power MOS-FET for a highside switch and a power MOS-FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS-FET for the highside switch and the power MOS-FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS-FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.
公开/授权文献
- US20110037449A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-02-17
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