发明授权
- 专利标题: Film formation method and apparatus for semiconductor process
- 专利标题(中): 用于半导体工艺的成膜方法和装置
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申请号: US12320018申请日: 2009-01-14
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公开(公告)号: US08080290B2公开(公告)日: 2011-12-20
- 发明人: Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
- 申请人: Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Smith, Gambrell & Russell, LLP
- 优先权: JP2008-009926 20080119
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C16/00
摘要:
A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.