发明授权
US08080455B2 Method for fabricating semiconductor device with increased breakdown voltage
有权
制造具有增加的击穿电压的半导体器件的方法
- 专利标题: Method for fabricating semiconductor device with increased breakdown voltage
- 专利标题(中): 制造具有增加的击穿电压的半导体器件的方法
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申请号: US12177779申请日: 2008-07-22
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公开(公告)号: US08080455B2公开(公告)日: 2011-12-20
- 发明人: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人地址: TW Hsinchu
- 专利权人: Vanguard International Semiconductor Corporation
- 当前专利权人: Vanguard International Semiconductor Corporation
- 当前专利权人地址: TW Hsinchu
- 优先权: TW97110053A 20080321
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
公开/授权文献
- US20090236681A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 公开/授权日:2009-09-24