Method for fabricating semiconductor device with increased breakdown voltage

Invention Grant

US08080455B2 Method for fabricating semiconductor device with increased breakdown voltage 有权

Title translation: 制造具有增加的击穿电压的半导体器件的方法

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Patent Title: Method for fabricating semiconductor device with increased breakdown voltage
Patent Title (中): 制造具有增加的击穿电压的半导体器件的方法
Application No.: US12177779

Application Date: 2008-07-22
Publication No.: US08080455B2

Publication Date: 2011-12-20
Inventor: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
Applicant: Chih-Ping Lin , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
Applicant Address: TW Hsinchu
Assignee: Vanguard International Semiconductor Corporation
Current Assignee: Vanguard International Semiconductor Corporation
Current Assignee Address: TW Hsinchu
Priority: TW97110053A 20080321
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for fabricating semiconductor device with increased breakdown voltage

Abstract:

A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.

Abstract(Chinese):

提供一种制造半导体器件的方法。提供了包括P阱的衬底。在P井中定义了低压装置区域和高压装置区域。在基板上形成光致抗蚀剂层。提供了包括屏蔽区域的光掩模。屏蔽区域对应于高电压设备区域。通过使用光掩模的光刻工艺将光掩模的图案转移到基板上的光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模，通过将P型离子选择性地掺杂到衬底中，在高电压器件区域的外部形成P型离子场。

Public/Granted literature

US20090236681A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2009-09-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS