Invention Grant
- Patent Title: Suppressing recombination in an electronic device
- Patent Title (中): 抑制电子装置中的重组
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Application No.: US11560157Application Date: 2006-11-15
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Publication No.: US08080824B2Publication Date: 2011-12-20
- Inventor: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
- Applicant: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
- Applicant Address: TW
- Assignee: Academia Sinica
- Current Assignee: Academia Sinica
- Current Assignee Address: TW
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
Public/Granted literature
- US20080110499A1 Suppressing Recombination in an Electronic Device Public/Granted day:2008-05-15
Information query
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