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公开(公告)号：US08080824B2
公开(公告)日：2011-12-20
申请号：US11560157
申请日：2006-11-15
Applicant: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
Inventor： Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
IPC: H01L29/00
CPC classification number: H01L31/0352 , H01L31/18
Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
Abstract translation: 半导体材料结构包括至少一个能够产生电子和空穴的区域，每个区域在操作期间具有相关联的平均动能。 靠近该区域的材料层提供大于与产生的电子相关联的平均动能和与孔相关联的平均动能的相关势能。
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公开(公告)号：US20080110499A1
公开(公告)日：2008-05-15
申请号：US11560157
申请日：2006-11-15
Applicant: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
Inventor： Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
IPC: H01L31/0256 , H01L31/18 , H01L31/0352
CPC classification number: H01L31/0352 , H01L31/18
Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
Abstract translation: 半导体材料结构包括至少一个能够产生电子和空穴的区域，每个区域在操作期间具有相关联的平均动能。 靠近该区域的材料层提供大于与产生的电子相关联的平均动能和与孔相关联的平均动能的相关势能。
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公开(公告)号：US6090358A
公开(公告)日：2000-07-18
申请号：US915173
申请日：1997-08-20
Applicant: Li-Chyong Chen , Kuei-Hsien Chen , Dhananjay Manohar Bhusari , Chun-Ku Chen
Inventor： Li-Chyong Chen , Kuei-Hsien Chen , Dhananjay Manohar Bhusari , Chun-Ku Chen
IPC: C01B21/082 , C23C16/36 , C01B33/00
CPC classification number: C01B21/0828 , C23C16/36 , C01P2002/72 , C01P2002/82 , C01P2004/61
Abstract: A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.
Abstract translation: 具有类似于具有碳原子取代大部分Si位点的Si 3 N 4的晶体结构的新型材料SiXCyNz通过碳，硅和含氮气体的微波等离子体增强分解以晶体形式合成在晶体Si衬底上。
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4.发明申请METHOD FOR MODIFYING SURFACE OF POWDER AND COMPOSITE CONTAINING SURFACE-MODIFIED POWDER 审中-公开粉末和复合材料表面改性粉末表面改性方法公开(公告)号：US20140203217A1
公开(公告)日：2014-07-24
申请号：US13945773
申请日：2013-07-18
Applicant: Bing Joe Hwang , Li-Chyong Chen , Kuei-Hsien Chen , Deniz Po Wong , Han-Ping Tseng
Inventor： Bing Joe Hwang , Li-Chyong Chen , Kuei-Hsien Chen , Deniz Po Wong , Han-Ping Tseng
IPC: H01M4/36
Abstract: A method for modifying a surface of a powder is provided. The method includes steps of providing a polar aprotic solvent; and mixing the polar aprotic solvent with the powder so that the polar aprotic solvent adheres to the surface of the powder.
Abstract translation: 提供了改变粉末表面的方法。 该方法包括提供极性非质子溶剂的步骤; 并将极性非质子溶剂与粉末混合，使极性非质子溶剂粘附到粉末表面。
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5.发明申请Functionalized Nitride Nanomaterials for Electrochemistry and Biosensor Applications 有权用于电化学和生物传感器应用的功能化氮化物纳米材料公开(公告)号：US20100279434A1
公开(公告)日：2010-11-04
申请号：US12030621
申请日：2008-02-13
Applicant: Kuei-Hsien Chen , Chin-Pei Chen , Abhitjit Ganguly , Li-Chyong Chen , Ying-Chin Chang
Inventor： Kuei-Hsien Chen , Chin-Pei Chen , Abhitjit Ganguly , Li-Chyong Chen , Ying-Chin Chang
IPC: H01L21/02
CPC classification number: B82Y15/00 , G01N27/3278
Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
Abstract translation: 本发明涉及氮化物纳米材料的表面改性/功能化和基于这种官能化氮化物材料的电化学和光学测量。 利用本发明，可以将各种生物分子如DNA，蛋白质和抗原固定在表面上用于测量以实现超敏感的化学和生物感测应用。
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Patent Agency Ranking
公开(公告)号：US5284614A
公开(公告)日：1994-02-08
申请号：US891116
申请日：1992-06-01
Applicant: Li-Chyong Chen , Stephen L. Dole , Ronald H. Arendt
Inventor： Li-Chyong Chen , Stephen L. Dole , Ronald H. Arendt
CPC classification number: C22C32/0031 , C22C1/1026
Abstract: Doped tungsten powder, or sintered tungsten bodies formed therefrom, having a fine dispersion of oxide particles of at least one metal from the group zirconium, hafnium, lanthanum, yttrium, and rare earth's are formed by the method of this invention. A mixture of a salt solution comprised of a soluble salt of the metal, and a tungsten blue oxide powder is formed. A hydroxide precipitating solution is admixed with the mixture to form a hydroxide precipitate of the metal on the tungsten blue oxide powder. The tungsten blue oxide powder and hydroxide precipitate are heated in a reducing atmosphere to form the tungsten powder having the dispersion of oxide particles. The doped tungsten powder can be consolidated and sintered to form tungsten bodies having a fine dispersion of the metal oxide.
Abstract translation: 通过本发明的方法形成具有由锆，铪，镧，钇和稀土族组成的至少一种金属的氧化物颗粒的细分散体的由其形成的掺杂钨粉末或烧结钨体。 形成由金属的可溶性盐构成的盐溶液和蓝色氧化钨粉末的混合物。 将氢氧化物沉淀溶液与混合物混合以在钨蓝色氧化物粉末上形成金属的氢氧化物沉淀物。 将钨蓝色氧化物粉末和氢氧化物沉淀物在还原气氛中加热以形成具有氧化物颗粒分散体的钨粉末。 掺杂的钨粉可以被固结和烧结以形成具有金属氧化物的细分散体的钨体。
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公开(公告)号：US20120156424A1
公开(公告)日：2012-06-21
申请号：US12968913
申请日：2010-12-15
Applicant: Kuei-hsien Chen , Ming-Shien Hu , Chun-Chiang Kuo , Li-chyong Chen
Inventor： Kuei-hsien Chen , Ming-Shien Hu , Chun-Chiang Kuo , Li-chyong Chen
CPC classification number: B82Y30/00 , B82Y40/00 , Y10T428/24174 , Y10T428/266
Abstract: A nanosheet includes a 2H—SiC layer having a first surface and a second surface, the first and second surfaces being opposed to each other; a first graphene layer formed of 1-10 graphenes being disposed on the first surface; and a second graphene layer formed of 1-10 graphenes being disposed on the second surface.
Abstract translation: 纳米片包括具有第一表面和第二表面的2H-SiC层，第一和第二表面彼此相对; 由1-10个石墨烯形成的第一石墨烯层设置在第一表面上; 并且由1-10个石墨烯形成的第二石墨烯层设置在第二表面上。
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8.发明授权Functionalized nitride nanomaterials for electrochemistry and biosensor applications 有权用于电化学和生物传感器应用的功能化氮化物纳米材料公开(公告)号：US08093069B2
公开(公告)日：2012-01-10
申请号：US12030621
申请日：2008-02-13
Applicant: Kuei-Hsien Chen , Chin-Pei Chen , Abhijit Ganguly , Li-Chyong Chen , Ying-Chin Chang
Inventor： Kuei-Hsien Chen , Chin-Pei Chen , Abhijit Ganguly , Li-Chyong Chen , Ying-Chin Chang
IPC: H01L21/00
CPC classification number: B82Y15/00 , G01N27/3278
Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
Abstract translation: 本发明涉及氮化物纳米材料的表面改性/功能化和基于这种官能化氮化物材料的电化学和光学测量。 利用本发明，可以将各种生物分子如DNA，蛋白质和抗原固定在表面上用于测量以实现超敏感的化学和生物感测应用。
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公开(公告)号：US20110076598A1
公开(公告)日：2011-03-31
申请号：US12570867
申请日：2009-09-30
Applicant: Kuei-Hsien CHEN , Chen-Hao WANG , Hsin-Cheng HSU , Sun-Tang CHANG , Li-Chyong CHEN
Inventor： Kuei-Hsien CHEN , Chen-Hao WANG , Hsin-Cheng HSU , Sun-Tang CHANG , Li-Chyong CHEN
IPC: H01M4/88 , C07D487/22 , H01M4/00 , B01J31/12 , C07H23/00
CPC classification number: B01J31/1815 , B01J31/1616 , B01J2531/025 , B01J2531/845 , C07D487/22 , H01M4/9008 , H01M4/925 , H01M4/926 , H01M2008/1095
Abstract: The invention provides metal-containing corrin compounds as catalysts for oxygen reduction in electrochemical devices, such as in fuel cells. The catalysts provide more efficient reduction at lower cost than conventional noble metal catalyst. Methods for preparing the catalysts are also provided.
Abstract translation: 本发明提供含金属的corrin化合物作为用于电化学装置中的氧还原的催化剂，例如在燃料电池中。 与常规的贵金属催化剂相比，催化剂以更低的成本提供更有效的还原。 还提供了制备催化剂的方法。
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10.发明授权Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions 失效通过在衬底的部分上形成掩模并蚀刻未屏蔽部分在衬底中形成纳米尖端阵列的方法公开(公告)号：US06960528B2
公开(公告)日：2005-11-01
申请号：US10247886
申请日：2002-09-20
Applicant: Kuie-Hsien Chen , Jih Shang Hwang , Debajyoti Das , Hong Chun Lo , Li-Chyong Chen
Inventor： Kuie-Hsien Chen , Jih Shang Hwang , Debajyoti Das , Hong Chun Lo , Li-Chyong Chen
IPC: C30B29/60 , H01J9/02 , H01L21/3065 , H01L21/308 , H01L31/0352 , H01L21/461
CPC classification number: B82Y30/00 , C30B29/605 , H01J9/025 , H01J2209/0223 , H01L21/3065 , H01L21/3085 , H01L31/0352
Abstract: Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocrystallites on the surface of the substrate, thereby masking portions of the substrate from other components of the process gas mixture, which etch exposed portions of the substrate. Accordingly, nanotip arrays formed using this technique can have nanocrytallite endpoints.
Abstract translation: 通过将衬底暴露于同时在衬底表面上形成纳米掩模的工艺气体混合物并蚀刻衬底表面的暴露部分以形成纳米尖端阵列而形成纳米管阵列。 工艺气体混合物的组分在衬底的表面上形成纳米晶体，从而将衬底的部分从处理气体混合物的其它组分掩蔽，其蚀刻衬底的暴露部分。 因此，使用这种技术形成的纳米尖端阵列可以具有纳米铁质体终点。
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