Invention Grant
- Patent Title: Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
- Patent Title (中): 通过分层纳米生成制造先进的热电材料
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Application No.: US12315520Application Date: 2008-12-04
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Publication No.: US08083986B2Publication Date: 2011-12-27
- Inventor: Sang Hyouk Choi , Yeonjoon Park , Sang-Hyon Chu , James R. Elliott , Glen C. King , Jae-Woo Kim , Peter T. Lillehei , Diane M. Stoakley
- Applicant: Sang Hyouk Choi , Yeonjoon Park , Sang-Hyon Chu , James R. Elliott , Glen C. King , Jae-Woo Kim , Peter T. Lillehei , Diane M. Stoakley
- Applicant Address: US VA Hampton US DC Washington
- Assignee: National Institute of Aerospace Associates,The United States of America as represented by the Adminstration of NASA
- Current Assignee: National Institute of Aerospace Associates,The United States of America as represented by the Adminstration of NASA
- Current Assignee Address: US VA Hampton US DC Washington
- Agent Kimberly A. Chateen
- Main IPC: B28B1/00
- IPC: B28B1/00

Abstract:
A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).
Public/Granted literature
- US20090185942A1 Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation Public/Granted day:2009-07-23
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