发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12556005申请日： 2009-09-09
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公开(公告)号： US08084830B2公开(公告)日： 2011-12-27
- 发明人: Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
- 申请人： Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-040475 20090224
- 主分类号： H01L27/11
- IPC分类号： H01L27/11
摘要：
The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The rectifier element includes a p type first semiconductor region, and a n type second semiconductor region. The first semiconductor region is formed of, at least in part, silicon-germanium mixture (Si1-xGex (0
公开/授权文献
- US20100213550A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2010-08-26
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