Invention Grant
- Patent Title: Process to manufacture magnetic tunnel junction read head
- Patent Title (中): 制造磁性隧道结读头的工艺
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Application No.: US11975266Application Date: 2007-10-18
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Publication No.: US08087157B2Publication Date: 2012-01-03
- Inventor: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Applicant Address: US CA Milpitas JP Tokyo
- Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee Address: US CA Milpitas JP Tokyo
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/187
- IPC: G11B5/187 ; B44C1/22

Abstract:
Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Public/Granted literature
- US20080034576A1 Process to manufacture magnetic tunnel junction read head Public/Granted day:2008-02-14
Information query
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