The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate. A dummy gate is formed over the substrate. A dielectric material is formed around the dummy gate. The dummy gate is then removed to form an opening in the dielectric material. Thereafter, a work function metal layer is formed to partially fill the opening. The remainder of the opening is then filled with a conductive layer using one of a polysilicon substitute method and a spin coating method.