Invention Grant
US08093578B2 Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element
有权
非易失性存储元件,非易失性存储元件阵列和用于制造非易失性存储元件的方法
- Patent Title: Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element
- Patent Title (中): 非易失性存储元件,非易失性存储元件阵列和用于制造非易失性存储元件的方法
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Application No.: US12513638Application Date: 2007-11-16
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Publication No.: US08093578B2Publication Date: 2012-01-10
- Inventor: Takeshi Takagi , Takumi Mikawa
- Applicant: Takeshi Takagi , Takumi Mikawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-312589 20061120
- International Application: PCT/JP2007/072307 WO 20071116
- International Announcement: WO2008/062734 WO 20080529
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L21/02

Abstract:
The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured such that a resistance variable layer (14) made of a metal oxide material is sandwiched between a lower electrode (13) and an upper electrode (15). The rectifying element (20) is connected to the resistance variable element (16), and is configured such that a blocking layer (18) is sandwiched between a first electrode layer (17) located on a lower side of the blocking layer (18) and a second electrode layer (19) located on an upper side of the blocking layer (18). The resistance variable element (16) and the rectifying element (20) are connected to each other in series in a thickness direction of the resistance variable layer (14), and the blocking layer (18) is formed as a barrier layer having a hydrogen barrier property.
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