发明授权
US08094482B2 Nonvolatile memory apparatus and nonvolatile data storage medium
有权
非易失性存储装置和非易失性数据存储介质
- 专利标题： Nonvolatile memory apparatus and nonvolatile data storage medium
- 专利标题（中）： 非易失性存储装置和非易失性数据存储介质
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申请号： US12529466申请日： 2008-10-28
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公开(公告)号： US08094482B2公开(公告)日： 2012-01-10
- 发明人: Zhiqiang Wei , Takeshi Takagi , Ken Kawai , Kazuhiko Shimakawa
- 申请人： Zhiqiang Wei , Takeshi Takagi , Ken Kawai , Kazuhiko Shimakawa
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2007-279876 20071029
- 国际申请： PCT/JP2008/003055 WO 20081028
- 国际公布： WO2009/057275 WO 20090507
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory apparatus and a nonvolatile data storage medium of the present invention, including nonvolatile memory elements each of which changes its resistance in response to electric pulses applied, comprises a first write circuit for performing first write in which a first electric pulse is applied to the nonvolatile memory element to switch a resistance value of the nonvolatile memory element from a first resistance value to a second resistance value and a second electric pulse which is opposite in polarity to the first electric pulse is applied to the nonvolatile memory element to switch the resistance value of the nonvolatile memory element from the second resistance value to the first resistance value.
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