发明授权
- 专利标题： Process tuning gas injection from the substrate edge
- 专利标题（中）： 从基板边缘处理调整气体注入
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申请号： US11359300申请日： 2006-02-21
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公开(公告)号： US08097120B2公开(公告)日： 2012-01-17
- 发明人: Rajinder Dhindsa , Mukund Srinivasan
- 申请人： Rajinder Dhindsa , Mukund Srinivasan
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Martine Penilla Group, LLP
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/50 ; C23C16/458 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
摘要：
Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.
公开/授权文献
- US20070193688A1 Process tuning gas injection from the substrate edge 公开/授权日：2007-08-23
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