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公开(公告)号：US09111729B2
公开(公告)日：2015-08-18
申请号：US12957923
申请日：2010-12-01
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32366 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/513 , H01J37/32082 , H01J37/32137 , H01J37/32376 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
摘要翻译： 公开了一种等离子体蚀刻处理工具。 等离子体蚀刻处理工具，包括用于支撑具有衬底表面积的衬底的衬底支撑件，包括具有定向在衬底支撑件上的开放侧的等离子体微室的处理头，等离子体微室的开放侧具有处理区域 小于衬底表面积，限定在衬底支撑件和处理头之间的密封结构以及连接到等离子体微室和衬底支撑件的电源。 还公开了一种用于执行等离子体蚀刻的方法。
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2.发明授权公开(公告)号：US07749353B2
公开(公告)日：2010-07-06
申请号：US11525602
申请日：2006-09-21
申请人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。
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3.发明申请Integrated capacitive and inductive power sources for a plasma etching chamber 有权用于等离子体蚀刻室的集成电容和感应电源公开(公告)号：US20070199658A1
公开(公告)日：2007-08-30
申请号：US11363703
申请日：2006-02-27
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译： 概括地说，本发明通过提供改进的室清洁机构来满足这些需要。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。
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4.发明授权公开(公告)号：US07144521B2
公开(公告)日：2006-12-05
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。
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5.发明授权Integrated capacitive and inductive power sources for a plasma etching chamber 有权用于等离子体蚀刻室的集成电容和感应电源公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。
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公开(公告)号：US20070193688A1
公开(公告)日：2007-08-23
申请号：US11359300
申请日：2006-02-21
IPC分类号： H01L21/306 , C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01L21/67069 , C23C16/45521 , C23C16/4585 , H01J37/3244 , H01L21/68735
摘要： Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.
摘要翻译： 一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。 在一个实施例中，等离子体处理室包括被配置为接收衬底的衬底支撑件和围绕衬底边缘的多个调谐气体注入孔，其中调谐气体注入孔在衬底的边缘提供调谐气体 基板的等离子体处理。
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公开(公告)号：US20060118518A1
公开(公告)日：2006-06-08
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
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公开(公告)号：US06391787B1
公开(公告)日：2002-05-21
申请号：US09689845
申请日：2000-10-13
申请人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
发明人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
IPC分类号： H01L2120
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
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公开(公告)号：US08097120B2
公开(公告)日：2012-01-17
申请号：US11359300
申请日：2006-02-21
IPC分类号： C23C16/455 , C23C16/50 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , C23C16/45521 , C23C16/4585 , H01J37/3244 , H01L21/68735
摘要： Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.
摘要翻译： 一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。 在一个实施例中，等离子体处理室包括被配置为接收衬底的衬底支撑件和围绕衬底边缘的多个调谐气体注入孔，其中调谐气体注入孔在衬底的边缘提供调谐气体 基板的等离子体处理。
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公开(公告)号：US20110132874A1
公开(公告)日：2011-06-09
申请号：US12957923
申请日：2010-12-01
CPC分类号： H01J37/32366 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/513 , H01J37/32082 , H01J37/32137 , H01J37/32376 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
摘要翻译： 公开了一种等离子体蚀刻处理工具。 等离子体蚀刻处理工具，包括用于支撑具有衬底表面积的衬底的衬底支撑件，包括具有定向在衬底支撑件上的开放侧的等离子体微室的处理头，等离子体微室的开放侧具有处理区域 小于衬底表面积，限定在衬底支撑件和处理头之间的密封结构以及连接到等离子体微室和衬底支撑件的电源。 还公开了一种用于执行等离子体蚀刻的方法。
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