Invention Grant
- Patent Title: Phase change memory structures
- Patent Title (中): 相变记忆结构
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Application No.: US12881678Application Date: 2010-09-14
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Publication No.: US08097873B2Publication Date: 2012-01-17
- Inventor: Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
- Applicant: Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal; James L. Clingan, Jr.
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L45/00
Abstract:
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
Public/Granted literature
- US20110001113A1 PHASE CHANGE MEMORY STRUCTURES Public/Granted day:2011-01-06
Information query
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