发明授权
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12906775申请日: 2010-10-18
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公开(公告)号: US08101468B2公开(公告)日: 2012-01-24
- 发明人: Takahiro Sugimura , Satoshi Imasu , Norihiko Sugita , Takafumi Betsui
- 申请人: Takahiro Sugimura , Satoshi Imasu , Norihiko Sugita , Takafumi Betsui
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2005-143402 20050517
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/48 ; H01L21/50
摘要:
The reliability of a semiconductor device which has the semiconductor components which were mounted on the same surface of the same substrate via the bump electrodes with which height differs, and with which package structure differs is improved. Semiconductor component 2 of WPP structure is mounted on the main surface of the interposer substrate which forms a semiconductor device via a plurality of bump electrodes. Semiconductor component 3 of CSP structure is mounted on the main surface of an interposer substrate via a plurality of bump electrodes with larger diameter and contiguity pitch than the above-mentioned bump electrode. And under-filling 4a and 4b mutually different, are filled up between the facing surfaces of this interposer substrate and semiconductor components 2, and between the facing surfaces of the interposer substrate and semiconductor components 3, respectively.
公开/授权文献
- US20110033983A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-02-10
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