发明授权
- 专利标题： Lithography patterning method
- 专利标题（中）： 平版印刷图案法
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申请号： US12566853申请日： 2009-09-25
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公开(公告)号： US08101530B2公开(公告)日： 2012-01-24
- 发明人: I-Hsiung Huang , Chin-Hsiang Lin , Heng-Jen Lee , Heng-Hsin Liu
- 申请人： I-Hsiung Huang , Chin-Hsiang Lin , Heng-Jen Lee , Heng-Hsin Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
公开/授权文献
- US20110076843A1 LITHOGRAPHY PATTERNING METHOD 公开/授权日：2011-03-31
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