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    Enhanced scanner throughput system and method
    2.
    发明授权
    Enhanced scanner throughput system and method 有权
    增强扫描仪吞吐量系统和方法

    公开(公告)号：US08906599B2

    公开(公告)日：2014-12-09

    申请号：US13473695

    申请日：2012-05-17

    申请人： Yu-Mei Liu ,  Chin-Hsiang Lin ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Wei Lin

    发明人： Yu-Mei Liu ,  Chin-Hsiang Lin ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Wei Lin

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70358

    摘要： A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.

    摘要翻译： 提供了一种提高扫描仪吞吐量的方法和系统。 使用连续线性扫描程序将来自掩模版的图像投影到基板上，其中连续扫描整列管芯或裸片的单元，即不进入不同的位置。 每个扫描包括相对于固定光束平移衬底。 当底物被翻译时，掩模版也被翻译。 当模具的第一裸片或裸片投影到衬底上时，标线沿着与扫描方向相反的方向平移，并且随着扫描沿着相同的方向继续，标线片然后沿着衬底的相反方向平移，从而形成倒置图案 在下一个死亡或细胞。 与曝光底物相关的时间最小化，因为步进操作仅在扫描完整的单元格列之后才发生。

    Litho cluster and modulization to enhance productivity
    4.
    发明授权
    Litho cluster and modulization to enhance productivity 有权
    Litho集群和模块化以提高生产力

    公开(公告)号：US08903532B2

    公开(公告)日：2014-12-02

    申请号：US13429921

    申请日：2012-03-26

    申请人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    发明人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    IPC分类号： H01L31/18

    CPC分类号： G03F7/30 ,  G03F7/16 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67745

    摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.

    摘要翻译： 本公开涉及一种用于半导体工件加工的平版印刷工具装置。 光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。 通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。 所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。 光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

    Litho Cluster and Modulization to Enhance Productivity
    5.
    发明申请
    Litho Cluster and Modulization to Enhance Productivity 有权
    Litho集群和模块化以提高生产力

    公开(公告)号：US20130252175A1

    公开(公告)日：2013-09-26

    申请号：US13429921

    申请日：2012-03-26

    申请人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    发明人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

    IPC分类号： G03F7/20 ,  H01L21/00

    CPC分类号： G03F7/30 ,  G03F7/16 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67745

    摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.

    摘要翻译： 本公开涉及一种用于半导体工件加工的平版印刷工具装置。 光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。 通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。 所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。 光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

    LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING
    8.
    发明申请
    LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING 有权
    用于掩模加工的平版印刷机检查

    公开(公告)号：US20110161893A1

    公开(公告)日：2011-06-30

    申请号：US12976646

    申请日：2010-12-22

    申请人： CHIN-HSIANG LIN ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    发明人： CHIN-HSIANG LIN ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    IPC分类号： G06F17/50

    CPC分类号： G03F1/72 ,  G03F1/86

    摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.

    摘要翻译： 本公开提供了许多不同的实施例。 示例性方法可以包括提供根据设计图案制造的掩模; 从掩模中提取掩模图案; 将掩模图案转换成渲染的掩模图案，其中模拟设计图案包括设计图案和掩模中的任何缺陷; 使用所渲染的掩模图案来模拟光刻工艺以产生虚拟晶片图案; 以及基于所述虚拟晶片图案确定所述掩模中的任何缺陷是否是关键的。 面罩中的关键缺陷可以修复。

    COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION
    10.
    发明申请
    COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION 有权
    用于极端超紫外线（EUV）掩蔽生产的成本有效的方法

    公开(公告)号：US20110159410A1

    公开(公告)日：2011-06-30

    申请号：US12650985

    申请日：2009-12-31

    申请人： Chin-Hsiang Lin ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    发明人： Chin-Hsiang Lin ,  Heng-Jen Lee ,  I-Hsiung Huang ,  Chih-Chiang Tu ,  Chun-Jen Chen ,  Rick Lai

    IPC分类号： G03F1/00 ,  G06F17/50

    CPC分类号： G03F1/24 ,  G03F1/72 ,  G03F1/84

    摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.

    摘要翻译： 本公开提供了许多不同的实施例。 示例性方法可以包括提供空白掩模和要在空白掩模上图案化的设计布局，所述设计布局包括临界区域; 检查空白掩模的缺陷并产生与空白掩模相关联的缺陷分布图; 将缺陷分布图映射到设计布局; 进行面膜制作过程; 以及基于所述映射执行掩模缺陷修复处理。