Invention Grant
US08102476B2 Display devices including an oxide semiconductor thin film transistor
有权
显示装置，包括氧化物半导体薄膜晶体管
- Patent Title: Display devices including an oxide semiconductor thin film transistor
- Patent Title (中): 显示装置，包括氧化物半导体薄膜晶体管
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Application No.: US12153657Application Date: 2008-05-22
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Publication No.: US08102476B2Publication Date: 2012-01-24
- Inventor: Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
- Applicant: Kyoung-seok Son , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0124382 20071203
- Main IPC: G02F1/1333
- IPC: G02F1/1333
Abstract:
A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.
Public/Granted literature
- US20090141203A1 Display devices including an oxide semiconductor thin film transistor Public/Granted day:2009-06-04
Information query
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