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US08106706B2 DC biasing circuit for a metal oxide semiconductor transistor 有权
用于金属氧化物半导体晶体管的直流偏置电路

DC biasing circuit for a metal oxide semiconductor transistor
Abstract:
A method for biasing a MOS transistor includes AC coupling an input signal from an amplifier stage to a gate of the MOS transistor. The method includes connecting a pair of diodes in an opposing parallel configuration to a bias transistor and a current source. Further, the method includes generating a DC bias voltage through the bias transistor and the current source. The method also includes clamping the voltage at drain of the bias transistor to a fixed voltage by a clamping circuit. Further, the method includes coupling the DC bias voltage to the gate of the MOS transistor through the pair of diodes.
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