Invention Grant
- Patent Title: DC biasing circuit for a metal oxide semiconductor transistor
- Patent Title (中): 用于金属氧化物半导体晶体管的直流偏置电路
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Application No.: US12463390Application Date: 2009-05-09
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Publication No.: US08106706B2Publication Date: 2012-01-31
- Inventor: Prakash Easwaran , Prasenjit Bhowmik , Sumeet Mathur
- Applicant: Prakash Easwaran , Prasenjit Bhowmik , Sumeet Mathur
- Applicant Address: IN Bangalore
- Assignee: Cosmic Circuits Private Limited
- Current Assignee: Cosmic Circuits Private Limited
- Current Assignee Address: IN Bangalore
- Agency: Evergreen Valley Law Group, P.C.
- Agent Kanika Radhakrishnan
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A method for biasing a MOS transistor includes AC coupling an input signal from an amplifier stage to a gate of the MOS transistor. The method includes connecting a pair of diodes in an opposing parallel configuration to a bias transistor and a current source. Further, the method includes generating a DC bias voltage through the bias transistor and the current source. The method also includes clamping the voltage at drain of the bias transistor to a fixed voltage by a clamping circuit. Further, the method includes coupling the DC bias voltage to the gate of the MOS transistor through the pair of diodes.
Public/Granted literature
- US20100164606A1 DC BIASING CIRCUIT FOR A METAL OXIDE SEMICONDUCTOR TRANSISTOR Public/Granted day:2010-07-01
Information query
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