发明授权
- 专利标题: Method for manufacturing single crystal
- 专利标题(中): 单晶制造方法
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申请号: US12515730申请日: 2008-05-07
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公开(公告)号: US08110042B2公开(公告)日: 2012-02-07
- 发明人: Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
- 申请人: Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
- 申请人地址: JP Omura-shi
- 专利权人: Sumco Techxiv Corporation
- 当前专利权人: Sumco Techxiv Corporation
- 当前专利权人地址: JP Omura-shi
- 代理机构: Holtz, Holtz, Goodman & Chick, PC
- 优先权: JP2007-125848 20070510
- 国际申请: PCT/JP2008/058483 WO 20080507
- 国际公布: WO2008/142993 WO 20081127
- 主分类号: C30B15/20
- IPC分类号: C30B15/20 ; C30B15/02 ; C30B15/04
摘要:
Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced.
公开/授权文献
- US20100050931A1 METHOD FOR MANUFACTURING SINGLE CRYSTAL 公开/授权日:2010-03-04