Invention Grant
- Patent Title: Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
- Patent Title (中): 微电子器件的介质多层结构及其制造方法
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Application No.: US12498311Application Date: 2009-07-06
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Publication No.: US08115262B2Publication Date: 2012-02-14
- Inventor: Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
- Applicant: Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR2004-0073078 20040913
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
Public/Granted literature
- US20090267129A1 DIELECTRIC MULTILAYER STRUCTURES OF MICROELECTRONIC DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2009-10-29
Information query
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