Invention Grant
- Patent Title: Nonvolatile memory devices having electromagnetically shielding source plates
- Patent Title (中): 具有电磁屏蔽源极的非易失性存储器件
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Application No.: US12437209Application Date: 2009-05-07
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Publication No.: US08116111B2Publication Date: 2012-02-14
- Inventor: Jong-Won Kim , Woon-Kyung Lee
- Applicant: Jong-Won Kim , Woon-Kyung Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0052251 20080603
- Main IPC: G11C5/06
- IPC: G11C5/06

Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate including a cell array region, memory cell transistors disposed at the cell array region, bitlines disposed on the memory cell transistors, and a source plate disposed between the memory cell transistors and the bitlines to veil the memory cell transistors thereunder.
Public/Granted literature
- US20090296477A1 Nonvolatile Memory Devices Having Electromagnetically Shielding Source Plates Public/Granted day:2009-12-03
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