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US08116111B2 Nonvolatile memory devices having electromagnetically shielding source plates 有权
具有电磁屏蔽源极的非易失性存储器件

Nonvolatile memory devices having electromagnetically shielding source plates
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate including a cell array region, memory cell transistors disposed at the cell array region, bitlines disposed on the memory cell transistors, and a source plate disposed between the memory cell transistors and the bitlines to veil the memory cell transistors thereunder.
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