发明授权
US08119324B2 Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
有权
形成图案的方法，用于形成上层膜的组合物和用于形成底层膜的组合物
- 专利标题： Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film
- 专利标题（中）： 形成图案的方法，用于形成上层膜的组合物和用于形成底层膜的组合物
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申请号： US12375915申请日： 2007-07-27
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公开(公告)号： US08119324B2公开(公告)日： 2012-02-21
- 发明人: Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
- 申请人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2006-213678 20060804
- 国际申请： PCT/JP2007/064756 WO 20070727
- 国际公布： WO2008/015969 WO 20080702
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004 ; G03F7/20 ; G03F7/26 ; G03F7/40
摘要：
A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.