发明授权
US08119462B2 Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor
有权
用于形成导电膜的方法，薄膜晶体管，具有薄膜晶体管的面板以及制造薄膜晶体管的方法
- 专利标题： Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor
- 专利标题（中）： 用于形成导电膜的方法，薄膜晶体管，具有薄膜晶体管的面板以及制造薄膜晶体管的方法
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申请号： US12364836申请日： 2009-02-03
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公开(公告)号： US08119462B2公开(公告)日： 2012-02-21
- 发明人: Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
- 申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
- 申请人地址： JP Chigasaki-Shi
- 专利权人： Ulvac, Inc.
- 当前专利权人： Ulvac, Inc.
- 当前专利权人地址： JP Chigasaki-Shi
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2006-218122 20060810
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.
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